Dual-gate resurf superjunction lateral DMOSFET

专利名称：Dual-gate resurf superjunction lateral

DMOSFET

发明人：Vishnu K. Khemka,Vijay

Parthasarathy,Ronghua Zhu,Amitava Bose

申请号：US09652813申请日：20000831公开号：US06528849B1公开日：20030304

专利附图：

摘要：A MOSFET includes a source region, a first channel region proximate to thesource region, a first gate region adjacent to the first base region, a drain region, a

second channel region proximate to the drain region, and a second gate region adjacentto the second channel region. A first channel is formed within the first channel region independence upon a first voltage applied to the first gate region with respect to at least afirst portion of the source region, and a second channel is formed within the secondchannel region in dependence upon a second voltage applied to the second gate regionwith respect to at least a second portion of the drain region. The MOSFET furtherincludes a drift region coupled between the first channel region and the second channelregion, where the drift region includes a set of alternating columns, each of which is alsocoupled between the first base region and the second base region. The set of alternatingcolumns includes a plurality of columns doped with N− type impurities alternating with aplurality columns doped with P− type impurities.

申请人：MOTOROLA, INC.

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