Method of manufacturing a thin film transistor and

专利名称：Method of manufacturing a thin film

transistor and a pixel structure

发明人：Der-Chun Wu,Shin-Chuan Chiang,Yu-Hsien

Chen,Po-Lung Chen,Yi-Hsien Lin,Cheng-JungYang,Kuo-Hsing Tseng

申请号：US14809021申请日：20150724公开号：US09543330B1公开日：20170110

专利附图：

摘要：A method manufacturing a thin film transistor is provided. A gate, a first

insulation layer covering the gate, a semiconductor layer over the gate, and a firstphotoresist pattern are sequentially formed on a substrate. The semiconductor layer ispatterned into a channel layer by using the first photoresist pattern as a mask and thefirst photoresist pattern is subsequently shrunken to remain a portion of the firstphotoresist pattern on the channel layer. A conductive material layer covering theremained portion of the first photoresist pattern, the channel layer and the firstinsulation layer is patterned by using a second photoresist pattern as a mask to form asource and a drain separated by a gap region exposing the remained portion. The secondphotoresist pattern and the remained portion are removed by performing a strippingprocess to expose the channel layer between the source and the drain.

申请人：Chunghwa Picture Tubes, LTD.

地址：Taoyuan TW

国籍：TW

代理机构：J.C. Patents

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