PA102FM资料

元器件交易网www.cecb2b.com NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) PA102FM SOT-23 DPRODUCT SUMMARY V(BR)DSS -20 RDS(ON) 118m£[ ID -3A 1 :GATE 2 :DRAIN 3 :SOURCE GS ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Power Dissipation TC = 25 °C TC = 70 °C TC = 25 °C TC = 70 °C SYMBOL VDS VGS ID IDM PD Tj, Tstg LIMITS -20 ±12 -3 -1.4 -10 1.25 0.8 -55 to 150 W A UNITS V V Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 12°C UNITS °C / W SYMBOL RθJA TYPICAL MAXIMUM 166 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±12V VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125 °C VDS = -5V, VGS = -4.5V VGS = -2.5V, ID =-1A VGS = -4.5V, ID = -2A VGS = -10V, ID = -2A LIMITS UNIT MIN TYP MAX -20 -1.2 -0.45 -0.8 -6 150 98 72 V ±100 nA -1 -10 215 118 85 µA A m£[ 1 Nov-02-2004 元器件交易网www.cecb2b.com

NIKO-SEM

P-Channel Logic Level Enhancement

Mode Field Effect Transistor (Preliminary)

PA102FM

SOT-23

Forward Transconductance1

gfs

VDS = -5V, ID = -2A

DYNAMIC

Input Capacitance Output Capacitance

Reverse Transfer Capacitance Total Gate Charge2 Gate-Source Charge2 Gate-Drain Charge2 Turn-On Delay Time2 Rise Time2

Turn-Off Delay Time Fall Time2

2

16 S

Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf

VGS = 0V, VDS = -6V, f = 1MHz

430 235 95 7.6 3.2 2 11 32 38 32

10 22 55 68 55

pF

nC

VDS = 0.5V(BR)DSS, VGS = -4.5V,

ID = -2A

VDD = -10V

ID ≅ -1A, VGS = -4.5V, RG = 6£[

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current Pulsed Current Forward Voltage1

12

3

IS ISM VSD

IF = -1A, VGS = 0V

-1.6 -3 -1.2

A V

Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2¢H. Independent of operating temperature. 3

Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “21YWW”, DATE CODE or LOT #

2

Nov-02-2004

元器件交易网www.cecb2b.com NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) PA102FM SOT-23 3 Nov-02-2004 元器件交易网www.cecb2b.com NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) PA102FM SOT-23 Body Diode Forward Voltage Variation with Source Current and Temperature10-Is - Reverse Drain Current(A)V = 0VGS1T = 125°CA 0.125°C-55°C0.010.0010.000100.20.40.60.81.0-V - Body Diode Forward Voltage(V)SD1.2 4 Nov-02-2004 元器件交易网www.cecb2b.com NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor (Preliminary) PA102FM SOT-23 SOT-23 (M3) MECHANICAL DATA Dimension A B C D E F G GFDEC1A32BHmm Min. 0.85 2.4 1.4 2.7 1 0 0.35 Typ. 1.6 2.9 1.1 Max. 1.15 3 1.8 3.1 1.3 0.1 0.5 Dimension H I J K L M N mm Min. 0.1 0.37 Typ. 0.15 Max. 0.25 I 5 Nov-02-2004